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MPSA05RLRA

MPSA05RLRA

MPSA05RLRA

ON Semiconductor

MPSA05RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSA05RLRA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
HTS Code8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating500mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MPSA05
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage60V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage250mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 4V
hFE Min 100
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:4693 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.354562$0.354562
10$0.334493$3.34493
100$0.315559$31.5559
500$0.297697$148.8485
1000$0.280846$280.846

MPSA05RLRA Product Details

MPSA05RLRA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 250mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 4V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).As a result, the part has a transition frequency of 100MHz.A maximum collector current of 500mA volts can be achieved.

MPSA05RLRA Features


the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz

MPSA05RLRA Applications


There are a lot of ON Semiconductor MPSA05RLRA applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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