MPS6602G Overview

This device has a DC current gain of 50 @ 500mA 1V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.When VCE saturation is 600mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.As a result, the part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

MPS6602G Features

the DC current gain for this device is 50 @ 500mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 4V
the current rating of this device is 1A
a transition frequency of 100MHz

MPS6602G Applications

There are a lot of ON Semiconductor MPS6602G applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver