BC807-16LT1G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.In the part, the transition frequency is 100MHz.A breakdown input voltage of 45V volts can be used.During maximum operation, collector current can be as low as 500mA volts.

BC807-16LT1G Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC807-16LT1G Applications

There are a lot of ON Semiconductor BC807-16LT1G applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter