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KSA1013YTA

KSA1013YTA

KSA1013YTA

ON Semiconductor

KSA1013YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA1013YTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 17 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins 3
Weight 371.1027mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -160V
Max Power Dissipation 900mW
Terminal Position BOTTOM
Current Rating -1A
Frequency 50MHz
Base Part Number KSA1013
Number of Elements 1
Element Configuration Single
Power Dissipation 900mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 200mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 160V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -1.5V
Max Breakdown Voltage 160V
Collector Base Voltage (VCBO) -160V
Emitter Base Voltage (VEBO) -6V
hFE Min 60
Height 8.2mm
Length 5.1mm
Width 4.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.081600 $0.0816
500 $0.060000 $30
1000 $0.050000 $50
2000 $0.045872 $91.744
5000 $0.042871 $214.355
10000 $0.039880 $398.8
15000 $0.038568 $578.52
50000 $0.037924 $1896.2
KSA1013YTA Product Details

KSA1013YTA Overview


In this device, the DC current gain is 160 @ 200mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -1.5V, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 50mA, 500mA.Keeping the emitter base voltage at -6V can result in a high level of efficiency.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 160V volts.A maximum collector current of 1A volts is possible.

KSA1013YTA Features


the DC current gain for this device is 160 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz

KSA1013YTA Applications


There are a lot of ON Semiconductor KSA1013YTA applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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