KSA1013YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA1013YTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 17 hours ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins
3
Weight
371.1027mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-160V
Max Power Dissipation
900mW
Terminal Position
BOTTOM
Current Rating
-1A
Frequency
50MHz
Base Part Number
KSA1013
Number of Elements
1
Element Configuration
Single
Power Dissipation
900mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 200mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
160V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-1.5V
Max Breakdown Voltage
160V
Collector Base Voltage (VCBO)
-160V
Emitter Base Voltage (VEBO)
-6V
hFE Min
60
Height
8.2mm
Length
5.1mm
Width
4.1mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.081600
$0.0816
500
$0.060000
$30
1000
$0.050000
$50
2000
$0.045872
$91.744
5000
$0.042871
$214.355
10000
$0.039880
$398.8
15000
$0.038568
$578.52
50000
$0.037924
$1896.2
KSA1013YTA Product Details
KSA1013YTA Overview
In this device, the DC current gain is 160 @ 200mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -1.5V, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 50mA, 500mA.Keeping the emitter base voltage at -6V can result in a high level of efficiency.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 160V volts.A maximum collector current of 1A volts is possible.
KSA1013YTA Features
the DC current gain for this device is 160 @ 200mA 5V a collector emitter saturation voltage of -1.5V the vce saturation(Max) is 1.5V @ 50mA, 500mA the emitter base voltage is kept at -6V the current rating of this device is -1A a transition frequency of 50MHz
KSA1013YTA Applications
There are a lot of ON Semiconductor KSA1013YTA applications of single BJT transistors.