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KSA1013YTA

KSA1013YTA

KSA1013YTA

ON Semiconductor

KSA1013YTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA1013YTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 17 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins 3
Weight 371.1027mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Box (TB)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -160V
Max Power Dissipation900mW
Terminal Position BOTTOM
Current Rating-1A
Frequency 50MHz
Base Part Number KSA1013
Number of Elements 1
Element ConfigurationSingle
Power Dissipation900mW
Transistor Application AMPLIFIER
Gain Bandwidth Product50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 200mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Collector Emitter Breakdown Voltage160V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage-1.5V
Max Breakdown Voltage 160V
Collector Base Voltage (VCBO) -160V
Emitter Base Voltage (VEBO) -6V
hFE Min 60
Height 8.2mm
Length 5.1mm
Width 4.1mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:14361 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.081600$0.0816
500$0.060000$30
1000$0.050000$50
2000$0.045872$91.744
5000$0.042871$214.355
10000$0.039880$398.8
15000$0.038568$578.52
50000$0.037924$1896.2

KSA1013YTA Product Details

KSA1013YTA Overview


In this device, the DC current gain is 160 @ 200mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -1.5V, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 50mA, 500mA.Keeping the emitter base voltage at -6V can result in a high level of efficiency.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 160V volts.A maximum collector current of 1A volts is possible.

KSA1013YTA Features


the DC current gain for this device is 160 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz

KSA1013YTA Applications


There are a lot of ON Semiconductor KSA1013YTA applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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