SS8550CBU Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.The collector emitter saturation voltage is -280mV, which allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 80mA, 800mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at -6V for high efficiency.Its current rating is -1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

SS8550CBU Features

the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz

SS8550CBU Applications

There are a lot of ON Semiconductor SS8550CBU applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver