DCX69-13 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -500mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 100mA, 1A.Keeping the emitter base voltage at -5V can result in a high level of efficiency.A transition frequency of 200MHz is present in the part.A breakdown input voltage of 20V volts can be used.During maximum operation, collector current can be as low as 1A volts.
DCX69-13 Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
DCX69-13 Applications
There are a lot of Diodes Incorporated DCX69-13 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
