BC80716MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.The part has a transition frequency of 100MHz.Input voltage breakdown is available at 45V volts.Collector current can be as low as 800mA volts at its maximum.
BC80716MTF Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80716MTF Applications
There are a lot of ON Semiconductor BC80716MTF applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
