BCX5610TA Overview

This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.150MHz is present in the transition frequency.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

BCX5610TA Features

the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

BCX5610TA Applications

There are a lot of Diodes Incorporated BCX5610TA applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter