NJVMJD122T4G Overview
In this device, the DC current gain is 1000 @ 4A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.When VCE saturation is 4V @ 80mA, 8A, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.4MHz is present in the transition frequency.As a result, it can handle voltages as low as 100V volts.The maximum collector current is 8A volts.
NJVMJD122T4G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
NJVMJD122T4G Applications
There are a lot of ON Semiconductor NJVMJD122T4G applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
