S2SC4617G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 6V.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 60mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 180MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

S2SC4617G Features

the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 60mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz

S2SC4617G Applications

There are a lot of ON Semiconductor S2SC4617G applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting