Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BC808-40LT1G

BC808-40LT1G

BC808-40LT1G

ON Semiconductor

BC808-40LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC808-40LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC808
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 25V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -700mV
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) 5V
hFE Min 250
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.035512 $0.035512
500 $0.026112 $13.056
1000 $0.021760 $21.76
2000 $0.019963 $39.926
5000 $0.018657 $93.285
10000 $0.017356 $173.56
15000 $0.016785 $251.775
50000 $0.016504 $825.2
BC808-40LT1G Product Details

BC808-40LT1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.The collector emitter saturation voltage is -700mV, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.A maximum collector current of 500mA volts can be achieved.

BC808-40LT1G Features


the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC808-40LT1G Applications


There are a lot of ON Semiconductor BC808-40LT1G applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News