BC808-40LT1G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.The collector emitter saturation voltage is -700mV, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.A maximum collector current of 500mA volts can be achieved.

BC808-40LT1G Features

the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC808-40LT1G Applications

There are a lot of ON Semiconductor BC808-40LT1G applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting