2SB1424T100R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SB1424T100R Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Max Power Dissipation
500mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
-3A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SB1424
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
500mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
240MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
240MHz
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
-20V
Emitter Base Voltage (VEBO)
-6V
hFE Min
120
Continuous Collector Current
-3A
VCEsat-Max
0.5 V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.115080
$0.11508
10
$0.108566
$1.08566
100
$0.102421
$10.2421
500
$0.096623
$48.3115
1000
$0.091154
$91.154
2SB1424T100R Product Details
2SB1424T100R Overview
DC current gain in this device equals 180 @ 100mA 2V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 2A.In order to achieve high efficiency, the continuous collector voltage should be kept at -3A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 240MHz.Breakdown input voltage is 20V volts.Collector current can be as low as 3A volts at its maximum.
2SB1424T100R Features
the DC current gain for this device is 180 @ 100mA 2V the vce saturation(Max) is 500mV @ 100mA, 2A the emitter base voltage is kept at -6V the current rating of this device is -3A a transition frequency of 240MHz
2SB1424T100R Applications
There are a lot of ROHM Semiconductor 2SB1424T100R applications of single BJT transistors.