ZXTP19100CZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP19100CZTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
130.492855mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
4.46W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
142MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
4.46W
Case Connection
COLLECTOR
Power - Max
2.4W
Transistor Application
SWITCHING
Gain Bandwidth Product
142MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
295mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
142MHz
Collector Emitter Saturation Voltage
-220mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
110V
Emitter Base Voltage (VEBO)
-7V
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.699693
$2.699693
10
$2.546880
$25.4688
100
$2.402717
$240.2717
500
$2.266714
$1133.357
1000
$2.138410
$2138.41
ZXTP19100CZTA Product Details
ZXTP19100CZTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.As it features a collector emitter saturation voltage of -220mV, it allows for maximum design flexibility.When VCE saturation is 295mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at -7V to gain high efficiency.In the part, the transition frequency is 142MHz.This device can take an input voltage of 100V volts before it breaks down.In extreme cases, the collector current can be as low as 2A volts.
ZXTP19100CZTA Features
the DC current gain for this device is 200 @ 100mA 2V a collector emitter saturation voltage of -220mV the vce saturation(Max) is 295mV @ 200mA, 2A the emitter base voltage is kept at -7V a transition frequency of 142MHz
ZXTP19100CZTA Applications
There are a lot of Diodes Incorporated ZXTP19100CZTA applications of single BJT transistors.