BDP947H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
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BDP947H6327XTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Power Dissipation
5W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
100MHz
Base Part Number
BDP947
Number of Elements
1
Configuration
SINGLE
Power Dissipation
3W
Case Connection
COLLECTOR
Power - Max
5W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.303114
$0.303114
10
$0.285956
$2.85956
100
$0.269770
$26.977
500
$0.254500
$127.25
1000
$0.240095
$240.095
BDP947H6327XTSA1 Product Details
BDP947H6327XTSA1 Overview
DC current gain in this device equals 100 @ 500mA 1V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.The maximum collector current is 3A volts.
BDP947H6327XTSA1 Features
the DC current gain for this device is 100 @ 500mA 1V the vce saturation(Max) is 500mV @ 200mA, 2A the emitter base voltage is kept at 5V a transition frequency of 100MHz
BDP947H6327XTSA1 Applications
There are a lot of Infineon Technologies BDP947H6327XTSA1 applications of single BJT transistors.