BC817-40LT1 Overview

This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Product package SOT-23-3 (TO-236) comes from the supplier.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.In extreme cases, the collector current can be as low as 500mA volts.

BC817-40LT1 Features

the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of SOT-23-3 (TO-236)

BC817-40LT1 Applications

There are a lot of ON Semiconductor BC817-40LT1 applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter