FJP13007H2TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJP13007H2TU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
400V
Max Power Dissipation
80W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
8A
Frequency
4MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
FJP13007
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
80W
Transistor Application
SWITCHING
Gain Bandwidth Product
4MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
26 @ 2A 5V
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 2A, 8A
Collector Emitter Breakdown Voltage
400V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
9V
hFE Min
5
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.90000
$0.9
10
$0.80800
$8.08
100
$0.62960
$62.96
500
$0.52010
$260.05
1,000
$0.41060
$0.4106
FJP13007H2TU Product Details
FJP13007H2TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 26 @ 2A 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 4MHz.The maximum collector current is 8A volts.
FJP13007H2TU Features
the DC current gain for this device is 26 @ 2A 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 3V @ 2A, 8A the emitter base voltage is kept at 9V the current rating of this device is 8A a transition frequency of 4MHz
FJP13007H2TU Applications
There are a lot of ON Semiconductor FJP13007H2TU applications of single BJT transistors.