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FJP13007H2TU

FJP13007H2TU

FJP13007H2TU

ON Semiconductor

FJP13007H2TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJP13007H2TU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation 80W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 8A
Frequency 4MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number FJP13007
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 80W
Transistor Application SWITCHING
Gain Bandwidth Product 4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 26 @ 2A 5V
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 2A, 8A
Collector Emitter Breakdown Voltage 400V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
hFE Min 5
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.90000 $0.9
10 $0.80800 $8.08
100 $0.62960 $62.96
500 $0.52010 $260.05
FJP13007H2TU Product Details

FJP13007H2TU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 26 @ 2A 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 4MHz.The maximum collector current is 8A volts.

FJP13007H2TU Features


the DC current gain for this device is 26 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 4MHz

FJP13007H2TU Applications


There are a lot of ON Semiconductor FJP13007H2TU applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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