FJP13007H2TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJP13007H2TU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
400V
Max Power Dissipation
80W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
8A
Frequency
4MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
FJP13007
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
80W
Transistor Application
SWITCHING
Gain Bandwidth Product
4MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
26 @ 2A 5V
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 2A, 8A
Collector Emitter Breakdown Voltage
400V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
700V
Emitter Base Voltage (VEBO)
9V
hFE Min
5
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.90000
$0.9
10
$0.80800
$8.08
100
$0.62960
$62.96
500
$0.52010
$260.05
FJP13007H2TU Product Details
FJP13007H2TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 26 @ 2A 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 4MHz.The maximum collector current is 8A volts.
FJP13007H2TU Features
the DC current gain for this device is 26 @ 2A 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 3V @ 2A, 8A the emitter base voltage is kept at 9V the current rating of this device is 8A a transition frequency of 4MHz
FJP13007H2TU Applications
There are a lot of ON Semiconductor FJP13007H2TU applications of single BJT transistors.