SBCP56-16T3G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.In the part, the transition frequency is 130MHz.A breakdown input voltage of 80V volts can be used.When collector current reaches its maximum, it can reach 1A volts.

SBCP56-16T3G Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz

SBCP56-16T3G Applications

There are a lot of ON Semiconductor SBCP56-16T3G applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver