Welcome to Hotenda.com Online Store!

logo
userjoin
Home

PBSS4420D,115

  • PBSS4420D,115
  • PBSS4420D,115

PBSS4420D,115

PBSS4420D,115

Nexperia USA Inc.

PBSS4420D,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS4420D,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 2.5W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number PBSS4420
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 2.5W
Power - Max 1.1W
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 1.1V @ 400mA, 4A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 100MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.332960 $4.33296
10 $4.087698 $40.87698
100 $3.856319 $385.6319
500 $3.638037 $1819.0185
1000 $3.432110 $3432.11
PBSS4420D,115 Product Details

PBSS4420D,115 Overview


In this device, the DC current gain is 250 @ 2A 2V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.1V @ 400mA, 4A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.The part has a transition frequency of 100MHz.This device can take an input voltage of 20V volts before it breaks down.Maximum collector currents can be below 4A volts.

PBSS4420D,115 Features


the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 1.1V @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

PBSS4420D,115 Applications


There are a lot of Nexperia USA Inc. PBSS4420D,115 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

Related Part Number

MMBTA63LT1G
ON Semiconductor
MMBTA63LT1G
$0 $/piece
ZXTP01500BGQTA
Diodes Incorporated
ZXTP01500BGQTA
$0 $/piece
TIP42AG
ON Semiconductor
TIP42AG
$0 $/piece
MMBTA20LT1G
Rochester Electronics, LLC
MMBTA20LT1G
$0 $/piece
MMBT2222AM3T5G
ON Semiconductor
MMBT2222AM3T5G
$0 $/piece
MMBT2484LT1G
ON Semiconductor
MMBT2484LT1G
$0 $/piece
BCW61AE6327HTSA1
Infineon Technologies
BCW61AE6327HTSA1
$0 $/piece
2N2219A
Microsemi Corporation
2N2219A
$0 $/piece
FZT589TA
Diodes Incorporated
FZT589TA
$0 $/piece
CMPT930 TR PBFREE
Central Semiconductor Corp
CMPT930 TR PBFREE
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News