BC81725MTF Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 160 @ 100mA 1V.A collector emitter saturation voltage of 700mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Parts of this part have transition frequencies of 100MHz.The breakdown input voltage is 45V volts.Collector current can be as low as 800mA volts at its maximum.

BC81725MTF Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC81725MTF Applications

There are a lot of ON Semiconductor BC81725MTF applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver