BC846BM3T5G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 6V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).In this part, there is a transition frequency of 100MHz.An input voltage of 65V volts is the breakdown voltage.During maximum operation, collector current can be as low as 100mA volts.

BC846BM3T5G Features

the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz

BC846BM3T5G Applications

There are a lot of ON Semiconductor BC846BM3T5G applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface