QST2TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
QST2TR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.25W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
QST
Pin Count
6
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
250MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 60mA, 3A
Collector Emitter Breakdown Voltage
12V
Current - Collector (Ic) (Max)
6A
Transition Frequency
250MHz
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
6V
hFE Min
270
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.238807
$4.238807
10
$3.998875
$39.98875
100
$3.772522
$377.2522
500
$3.558984
$1779.492
1000
$3.357532
$3357.532
QST2TR Product Details
QST2TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 500mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 60mA, 3A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.The part has a transition frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.
QST2TR Features
the DC current gain for this device is 270 @ 500mA 2V the vce saturation(Max) is 250mV @ 60mA, 3A the emitter base voltage is kept at 6V a transition frequency of 250MHz
QST2TR Applications
There are a lot of ROHM Semiconductor QST2TR applications of single BJT transistors.