BD13616STU Overview

In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1.5A.In this part, there is a transition frequency of 75MHz.Single BJT transistor can be broken down at a voltage of 45V volts.Collector current can be as low as 1.5A volts at its maximum.

BD13616STU Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 75MHz

BD13616STU Applications

There are a lot of ON Semiconductor BD13616STU applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver