BC850AMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC850AMTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 6 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LOW NOISE
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
310mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
100mA
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC850
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
110
Height
930μm
Length
2.92mm
Width
1.3mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.076169
$0.076169
500
$0.056006
$28.003
1000
$0.046672
$46.672
2000
$0.042818
$85.636
5000
$0.040017
$200.085
10000
$0.037226
$372.26
15000
$0.036001
$540.015
50000
$0.035399
$1769.95
BC850AMTF Product Details
BC850AMTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.A transition frequency of 300MHz is present in the part.Single BJT transistor can be broken down at a voltage of 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC850AMTF Features
the DC current gain for this device is 110 @ 2mA 5V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 600mV @ 5mA, 100mA the emitter base voltage is kept at 5V the current rating of this device is 100mA a transition frequency of 300MHz
BC850AMTF Applications
There are a lot of ON Semiconductor BC850AMTF applications of single BJT transistors.