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BC858CMTF

BC858CMTF

BC858CMTF

ON Semiconductor

BC858CMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC858CMTF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Lifecycle Status LIFETIME (Last Updated: 1 day ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 310mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -100mA
Frequency 150MHz
Base Part Number BC858
Number of Elements 1
Element Configuration Single
Power Dissipation 310mW
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -5V
hFE Min 110
Height 930μm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.059622 $0.059622
500 $0.043840 $21.92
1000 $0.036533 $36.533
2000 $0.033517 $67.034
5000 $0.031324 $156.62
10000 $0.029139 $291.39
15000 $0.028181 $422.715
50000 $0.027710 $1385.5
BC858CMTF Product Details

BC858CMTF Overview


This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.As a result, the part has a transition frequency of 150MHz.There is a breakdown input voltage of 30V volts that it can take.The maximum collector current is 100mA volts.

BC858CMTF Features


the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz

BC858CMTF Applications


There are a lot of ON Semiconductor BC858CMTF applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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