BCW60A Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 2mA 5V.A collector emitter saturation voltage of 350mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 1.25mA, 50mA.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 100mA volts.

BCW60A Features

the DC current gain for this device is 120 @ 2mA 5V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA

BCW60A Applications

There are a lot of ON Semiconductor BCW60A applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver