BCW66G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.This device can take an input voltage of 45V volts before it breaks down.Single BJT transistor comes in a supplier device package of SOT-23-3.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

BCW66G Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of SOT-23-3

BCW66G Applications

There are a lot of ON Semiconductor BCW66G applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver