BCW66GLT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BCW66GLT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1996
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Voltage - Rated DC
45V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
800mA
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
BCW66
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
700mV
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
20nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Frequency - Transition
100MHz
Turn Off Time-Max (toff)
400ns
Turn On Time-Max (ton)
100ns
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
BCW66GLT1 Product Details
BCW66GLT1 Overview
This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.This device has a current rating of 800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.100MHz is present in the transition frequency.A maximum collector current of 800mA volts can be achieved.
BCW66GLT1 Features
the DC current gain for this device is 160 @ 100mA 1V the vce saturation(Max) is 700mV @ 50mA, 500mA the current rating of this device is 800mA a transition frequency of 100MHz
BCW66GLT1 Applications
There are a lot of ON Semiconductor BCW66GLT1 applications of single BJT transistors.