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BCW66GLT1

BCW66GLT1

BCW66GLT1

ON Semiconductor

BCW66GLT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BCW66GLT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1996
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Voltage - Rated DC 45V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 800mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number BCW66
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 20nA
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Frequency - Transition 100MHz
Turn Off Time-Max (toff) 400ns
Turn On Time-Max (ton) 100ns
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
BCW66GLT1 Product Details

BCW66GLT1 Overview


This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.This device has a current rating of 800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.100MHz is present in the transition frequency.A maximum collector current of 800mA volts can be achieved.

BCW66GLT1 Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the current rating of this device is 800mA
a transition frequency of 100MHz

BCW66GLT1 Applications


There are a lot of ON Semiconductor BCW66GLT1 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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