BCW69 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BCW69 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Voltage - Rated DC
-45V
Max Power Dissipation
350mW
Current Rating
100mA
Base Part Number
BCW69
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
150MHz
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-5V
hFE Min
120
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BCW69 Product Details
BCW69 Overview
This device has a DC current gain of 120 @ 2mA 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 500μA, 10mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).150MHz is present in the transition frequency.A maximum collector current of 100mA volts is possible.
BCW69 Features
the DC current gain for this device is 120 @ 2mA 5V the vce saturation(Max) is 300mV @ 500μA, 10mA the emitter base voltage is kept at -5V the current rating of this device is 100mA a transition frequency of 150MHz
BCW69 Applications
There are a lot of ON Semiconductor BCW69 applications of single BJT transistors.