BD13716S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1.5A.A transition frequency of 50MHz is present in the part.As a result, it can handle voltages as low as 60V volts.In extreme cases, the collector current can be as low as 1.5A volts.
BD13716S Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 50MHz
BD13716S Applications
There are a lot of ON Semiconductor BD13716S applications of single BJT transistors.
- Interface
-
- Driver
-
- Inverter
-
- Muting
-