BD179G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD179G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
30W
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Frequency
3MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BD179
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
30W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
800mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
63
Height
6.35mm
Length
31.75mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.63000
$0.63
10
$0.54100
$5.41
100
$0.40370
$40.37
500
$0.31716
$158.58
BD179G Product Details
BD179G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.3MHz is present in the transition frequency.The maximum collector current is 3A volts.
BD179G Features
the DC current gain for this device is 63 @ 150mA 2V a collector emitter saturation voltage of 800mV the vce saturation(Max) is 800mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 3A a transition frequency of 3MHz
BD179G Applications
There are a lot of ON Semiconductor BD179G applications of single BJT transistors.