BD180G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD180G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
30W
Peak Reflow Temperature (Cel)
260
Current Rating
-3A
Frequency
3MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BD180
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
30W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
3MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Current - Collector Cutoff (Max)
1mA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
800mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
15
Height
11.04mm
Length
7.74mm
Width
2.66mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.913003
$1.913003
10
$1.804720
$18.0472
100
$1.702566
$170.2566
500
$1.606194
$803.097
1000
$1.515278
$1515.278
BD180G Product Details
BD180G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 800mV.A VCE saturation (Max) of 800mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.Maximum collector currents can be below 1A volts.
BD180G Features
the DC current gain for this device is 40 @ 150mA 2V a collector emitter saturation voltage of 800mV the vce saturation(Max) is 800mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is -3A a transition frequency of 3MHz
BD180G Applications
There are a lot of ON Semiconductor BD180G applications of single BJT transistors.