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BD241ATU

BD241ATU

BD241ATU

ON Semiconductor

BD241ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD241ATU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD241
Power - Max 40W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 3A
BD241ATU Product Details

BD241ATU Overview


DC current gain in this device equals 25 @ 1A 4V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 600mA, 3A.Supplier package TO-220-3 contains the product.The device has a 60V maximal voltage - Collector Emitter Breakdown.

BD241ATU Features


the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the supplier device package of TO-220-3

BD241ATU Applications


There are a lot of ON Semiconductor BD241ATU applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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