BD242CTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD242CTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BD242
Power - Max
40W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
3A
BD242CTU Product Details
BD242CTU Overview
In this device, the DC current gain is 25 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 600mA, 3A.Single BJT transistor comes in a supplier device package of TO-220-3.Device displays Collector Emitter Breakdown (100V maximal voltage).
BD242CTU Features
the DC current gain for this device is 25 @ 1A 4V the vce saturation(Max) is 1.2V @ 600mA, 3A the supplier device package of TO-220-3
BD242CTU Applications
There are a lot of ON Semiconductor BD242CTU applications of single BJT transistors.