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BD242CTU

BD242CTU

BD242CTU

ON Semiconductor

BD242CTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD242CTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD242
Power - Max 40W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 3A
In-Stock:3067 items

BD242CTU Product Details

BD242CTU Overview


In this device, the DC current gain is 25 @ 1A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 600mA, 3A.Single BJT transistor comes in a supplier device package of TO-220-3.Device displays Collector Emitter Breakdown (100V maximal voltage).

BD242CTU Features


the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the supplier device package of TO-220-3

BD242CTU Applications


There are a lot of ON Semiconductor BD242CTU applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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