BD436S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD436S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-32V
Max Power Dissipation
36W
Current Rating
-4A
Frequency
3MHz
Base Part Number
BD436
Number of Elements
1
Element Configuration
Single
Power Dissipation
36W
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
32V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
32V
Transition Frequency
3MHz
Collector Base Voltage (VCBO)
-32V
Emitter Base Voltage (VEBO)
-5V
hFE Min
50
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BD436S Product Details
BD436S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 10mA 5V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.The part has a transition frequency of 3MHz.During maximum operation, collector current can be as low as 4A volts.
BD436S Features
the DC current gain for this device is 40 @ 10mA 5V the vce saturation(Max) is 500mV @ 200mA, 2A the emitter base voltage is kept at -5V the current rating of this device is -4A a transition frequency of 3MHz
BD436S Applications
There are a lot of ON Semiconductor BD436S applications of single BJT transistors.