BD436TG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.This device has a current rating of -4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.The maximum collector current is 4A volts.
BD436TG Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD436TG Applications
There are a lot of ON Semiconductor BD436TG applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting