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BD436TG

BD436TG

BD436TG

ON Semiconductor

BD436TG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD436TG Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -32V
Max Power Dissipation 36W
Peak Reflow Temperature (Cel) 260
Current Rating -4A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BD436
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 36W
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA 1V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 32V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.068609 $3.068609
10 $2.894914 $28.94914
100 $2.731051 $273.1051
500 $2.576463 $1288.2315
1000 $2.430625 $2430.625
BD436TG Product Details

BD436TG Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.This device has a current rating of -4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.The maximum collector current is 4A volts.

BD436TG Features


the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 3MHz

BD436TG Applications


There are a lot of ON Semiconductor BD436TG applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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