BD437S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD437S Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
LIFETIME (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
36W
Current Rating
4A
Frequency
3MHz
Base Part Number
BD437
Number of Elements
1
Element Configuration
Single
Power Dissipation
36W
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
600mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Height
11mm
Length
8mm
Width
3.25mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.505920
$5.50592
10
$5.194264
$51.94264
100
$4.900249
$490.0249
500
$4.622877
$2311.4385
1000
$4.361204
$4361.204
BD437S Product Details
BD437S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 10mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 200mA, 2A.Emitter base voltages of 5V can achieve high levels of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.There is a transition frequency of 3MHz in the part.Input voltage breakdown is available at 45V volts.Collector current can be as low as 4A volts at its maximum.
BD437S Features
the DC current gain for this device is 30 @ 10mA 5V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 600mV @ 200mA, 2A the emitter base voltage is kept at 5V the current rating of this device is 4A a transition frequency of 3MHz
BD437S Applications
There are a lot of ON Semiconductor BD437S applications of single BJT transistors.