PMST3906,115 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Parts of this part have transition frequencies of 250MHz.Breakdown input voltage is 40V volts.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

PMST3906,115 Features

the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz

PMST3906,115 Applications

There are a lot of Nexperia USA Inc. PMST3906,115 applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface