PBSS4160XF Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 170 @ 500mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 50mA, 500mA.Device displays Collector Emitter Breakdown (60V maximal voltage).

PBSS4160XF Features

the DC current gain for this device is 170 @ 500mA 10V
the vce saturation(Max) is 200mV @ 50mA, 500mA

PBSS4160XF Applications

There are a lot of Nexperia USA Inc. PBSS4160XF applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver