2N3416 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N3416 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 2mA 4.5V
Current - Collector Cutoff (Max)
100nA ICBO
Voltage - Collector Emitter Breakdown (Max)
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.11000
$1.11
500
$1.0989
$549.45
1000
$1.0878
$1087.8
1500
$1.0767
$1615.05
2000
$1.0656
$2131.2
2500
$1.0545
$2636.25
2N3416 PBFREE Product Details
2N3416 PBFREE Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 2mA 4.5V.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
2N3416 PBFREE Features
the DC current gain for this device is 75 @ 2mA 4.5V
2N3416 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N3416 PBFREE applications of single BJT transistors.