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2N3416 PBFREE

2N3416 PBFREE

2N3416 PBFREE

Central Semiconductor Corp

2N3416 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N3416 PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature-65°C~150°C TJ
PackagingBulk
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 2mA 4.5V
Current - Collector Cutoff (Max) 100nA ICBO
Voltage - Collector Emitter Breakdown (Max) 50V
RoHS StatusROHS3 Compliant
In-Stock:8027 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.11000$1.11
500$1.0989$549.45
1000$1.0878$1087.8
1500$1.0767$1615.05
2000$1.0656$2131.2
2500$1.0545$2636.25

2N3416 PBFREE Product Details

2N3416 PBFREE Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 2mA 4.5V.There is a 50V maximal voltage in the device due to collector-emitter breakdown.

2N3416 PBFREE Features


the DC current gain for this device is 75 @ 2mA 4.5V

2N3416 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N3416 PBFREE applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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