DSA200100L Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 210 @ 2mA 10V.A collector emitter saturation voltage of -500mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.Maintaining the continuous collector voltage at -100mA is essential for high efficiency.Keeping the emitter base voltage at -7V can result in a high level of efficiency.In this part, there is a transition frequency of 150MHz.Single BJT transistor can be broken down at a voltage of 50V volts.In extreme cases, the collector current can be as low as 100mA volts.
DSA200100L Features
the DC current gain for this device is 210 @ 2mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at -7V
a transition frequency of 150MHz
DSA200100L Applications
There are a lot of Panasonic Electronic Components DSA200100L applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
