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BD537J

BD537J

BD537J

ON Semiconductor

BD537J datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD537J Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD537
Power - Max 50W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 2A 2V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 12MHz
In-Stock:2274 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.994711$6.994711
10$6.598784$65.98784
100$6.225268$622.5268
500$5.872894$2936.447
1000$5.540466$5540.466

BD537J Product Details

BD537J Overview


In this device, the DC current gain is 30 @ 2A 2V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 800mV @ 200mA, 2A.Supplier device package TO-220-3 comes with the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

BD537J Features


the DC current gain for this device is 30 @ 2A 2V
the vce saturation(Max) is 800mV @ 200mA, 2A
the supplier device package of TO-220-3

BD537J Applications


There are a lot of ON Semiconductor BD537J applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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