BD537J datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD537J Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BD537
Power - Max
50W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 2A 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
8A
Frequency - Transition
12MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.994711
$6.994711
10
$6.598784
$65.98784
100
$6.225268
$622.5268
500
$5.872894
$2936.447
1000
$5.540466
$5540.466
BD537J Product Details
BD537J Overview
In this device, the DC current gain is 30 @ 2A 2V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 800mV @ 200mA, 2A.Supplier device package TO-220-3 comes with the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BD537J Features
the DC current gain for this device is 30 @ 2A 2V the vce saturation(Max) is 800mV @ 200mA, 2A the supplier device package of TO-220-3
BD537J Applications
There are a lot of ON Semiconductor BD537J applications of single BJT transistors.