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BD676A

BD676A

BD676A

ON Semiconductor

BD676A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD676A Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Supplier Device Package TO-225AA
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -45V
Max Power Dissipation 40W
Current Rating -4A
Base Part Number BD676
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 40W
Power - Max 40W
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage 45V
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 4A
Collector Emitter Saturation Voltage 2.8V
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 5V
hFE Min 750
Continuous Collector Current 4A
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
BD676A Product Details

BD676A Overview


This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 2.8V, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at 4A for high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Product comes in the supplier's device package TO-225AA.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.A maximum collector current of 4A volts is possible.

BD676A Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
the supplier device package of TO-225AA

BD676A Applications


There are a lot of ON Semiconductor BD676A applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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