BD676G Overview

In this device, the DC current gain is 750 @ 1.5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 30mA, 1.5A.An emitter's base voltage can be kept at 5V to gain high efficiency.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 200MHz is present in the part.Collector current can be as low as 4A volts at its maximum.

BD676G Features

the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 200MHz

BD676G Applications

There are a lot of ON Semiconductor BD676G applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver