BD676G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD676G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-45V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
-4A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BD676
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
40W
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage
45V
Transition Frequency
200MHz
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Height
11.04mm
Length
7.74mm
Width
2.66mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.676720
$5.67672
10
$5.355396
$53.55396
100
$5.052261
$505.2261
500
$4.766284
$2383.142
1000
$4.496494
$4496.494
BD676G Product Details
BD676G Overview
In this device, the DC current gain is 750 @ 1.5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 30mA, 1.5A.An emitter's base voltage can be kept at 5V to gain high efficiency.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 200MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD676G Features
the DC current gain for this device is 750 @ 1.5A 3V the vce saturation(Max) is 2.5V @ 30mA, 1.5A the emitter base voltage is kept at 5V the current rating of this device is -4A a transition frequency of 200MHz
BD676G Applications
There are a lot of ON Semiconductor BD676G applications of single BJT transistors.