KSA473Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA473Y Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Reach Compliance Code
compliant
Base Part Number
KSA473
Power - Max
10W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
100MHz
KSA473Y Product Details
KSA473Y Overview
This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the collector current and the base current.When VCE saturation is 800mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
KSA473Y Features
the DC current gain for this device is 120 @ 500mA 2V the vce saturation(Max) is 800mV @ 200mA, 2A
KSA473Y Applications
There are a lot of ON Semiconductor KSA473Y applications of single BJT transistors.