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KSA473Y

KSA473Y

KSA473Y

ON Semiconductor

KSA473Y datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSA473Y Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code compliant
Base Part Number KSA473
Power - Max 10W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 100MHz
In-Stock:4332 items

KSA473Y Product Details

KSA473Y Overview


This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the collector current and the base current.When VCE saturation is 800mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

KSA473Y Features


the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 800mV @ 200mA, 2A

KSA473Y Applications


There are a lot of ON Semiconductor KSA473Y applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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