TIP35-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIP35-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
3.5W
Base Part Number
TIP35
Polarity
NPN
Power - Max
3.5W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
4V
Max Collector Current
25A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 15A 4V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
4V @ 5A, 25A
Collector Emitter Breakdown Voltage
40V
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
25A
RoHS Status
ROHS3 Compliant
TIP35-S Product Details
TIP35-S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 15A 4V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 5A, 25A.Product comes in the supplier's device package SOT-93.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.When collector current reaches its maximum, it can reach 25A volts.
TIP35-S Features
the DC current gain for this device is 10 @ 15A 4V the vce saturation(Max) is 4V @ 5A, 25A the supplier device package of SOT-93
TIP35-S Applications
There are a lot of Bourns Inc. TIP35-S applications of single BJT transistors.