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TIP35-S

TIP35-S

TIP35-S

Bourns Inc.

TIP35-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP35-S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Supplier Device Package SOT-93
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 1993
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 3.5W
Base Part Number TIP35
Polarity NPN
Power - Max 3.5W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 25A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 15A 4V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 4V @ 5A, 25A
Collector Emitter Breakdown Voltage 40V
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 25A
RoHS Status ROHS3 Compliant
TIP35-S Product Details

TIP35-S Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 15A 4V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 5A, 25A.Product comes in the supplier's device package SOT-93.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.When collector current reaches its maximum, it can reach 25A volts.

TIP35-S Features


the DC current gain for this device is 10 @ 15A 4V
the vce saturation(Max) is 4V @ 5A, 25A
the supplier device package of SOT-93

TIP35-S Applications


There are a lot of Bourns Inc. TIP35-S applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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