KSE45H8 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSE45H8 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
HTS Code
8541.29.00.75
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Base Part Number
KSE45H
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
1.67W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 2A 1V
Current - Collector Cutoff (Max)
10μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
10A
Transition Frequency
40MHz
Frequency - Transition
40MHz
RoHS Status
RoHS Compliant
KSE45H8 Product Details
KSE45H8 Overview
In this device, the DC current gain is 60 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.Device displays Collector Emitter Breakdown (60V maximal voltage).
KSE45H8 Features
the DC current gain for this device is 60 @ 2A 1V the vce saturation(Max) is 1V @ 400mA, 8A a transition frequency of 40MHz
KSE45H8 Applications
There are a lot of ON Semiconductor KSE45H8 applications of single BJT transistors.