MPSW56RLRA Overview
In this device, the DC current gain is 50 @ 250mA 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.When VCE saturation is 500mV @ 10mA, 250mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).A transition frequency of 50MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
MPSW56RLRA Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSW56RLRA Applications
There are a lot of ON Semiconductor MPSW56RLRA applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
