PBSS4620PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
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PBSS4620PA,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-PowerUDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Max Power Dissipation
2.1W
Terminal Position
DUAL
Base Part Number
PBSS4620
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
2.1W
Transistor Application
SWITCHING
Gain Bandwidth Product
80MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
260 @ 2A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
275mV @ 300mA, 6A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
80MHz
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.210266
$1.210266
10
$1.141760
$11.4176
100
$1.077132
$107.7132
500
$1.016162
$508.081
1000
$0.958644
$958.644
PBSS4620PA,115 Product Details
PBSS4620PA,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 260 @ 2A 2V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 275mV @ 300mA, 6A.With the emitter base voltage set at 6V, an efficient operation can be achieved.80MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 20V volts.A maximum collector current of 6A volts is possible.
PBSS4620PA,115 Features
the DC current gain for this device is 260 @ 2A 2V the vce saturation(Max) is 275mV @ 300mA, 6A the emitter base voltage is kept at 6V a transition frequency of 80MHz
PBSS4620PA,115 Applications
There are a lot of Nexperia USA Inc. PBSS4620PA,115 applications of single BJT transistors.