BCP69-16,115 Overview

In this device, the DC current gain is 100 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of -600mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 1A.With the emitter base voltage set at -5V, an efficient operation can be achieved.A transition frequency of 40MHz is present in the part.Collector Emitter Breakdown occurs at 20VV - Maximum voltage.In extreme cases, the collector current can be as low as -2A volts.

BCP69-16,115 Features

the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 40MHz

BCP69-16,115 Applications

There are a lot of Nexperia USA Inc. BCP69-16,115 applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface