BD682TG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD682TG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Current Rating
-4A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BD682
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power - Max
40W
Transistor Application
AMPLIFIER
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BD682TG Product Details
BD682TG Overview
In this device, the DC current gain is 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -4A current rating.Collector current can be as low as 4A volts at its maximum.
BD682TG Features
the DC current gain for this device is 750 @ 1.5A 3V a collector emitter saturation voltage of 2.5V the vce saturation(Max) is 2.5V @ 30mA, 1.5A the emitter base voltage is kept at 5V the current rating of this device is -4A
BD682TG Applications
There are a lot of ON Semiconductor BD682TG applications of single BJT transistors.